052-6401 rev b 7-2012 APT40GR120B2D30 symbol parameter ratings unit v ces collector emitter voltage 1200 v v ge gate-emitter voltage 30 i c1 continuous collector current @ t c = 25c 88 a i c2 continuous collector current @ t c = 110c 40 i cm pulsed collector current 1 160 scwt short circuit withstand time: v ce = 600v, v ge = 15v, t c =125c 10 s p d total power dissipation @ t c = 25c 500 w t j ,t stg operating and storage junction temperature range -55 to 150 c t l max. lead temp. for soldering: 0.063" from case for 10 sec. 300 maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. static electrical characteristics APT40GR120B2D30 1200v, 40a, v ce(on) = 2.5v typical microsemi website - http://www.microsemi.com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. symbol parameter min typ max unit v (br)ces collector-emitter breakdown voltage (v ge = 0v, i c = 1.0ma) 1200 volts v ge(th) gate threshold voltage (v ce = v ge , i c = 2.5ma, t j = 25c) 3 5.0 6.0 v ce(on) collector-emitter on voltage (v ge = 15v, i c = 40a, t j = 25c) 2.5 3.2 collector-emitter on voltage (v ge = 15v, i c = 40a, t j = 125c) 3.5 collector-emitter on voltage (v ge = 15v, i c = 88a, t j = 25c) 3.5 i ces collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 20 1100 a collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 200 i ges gate-emitter leakage current (v ge = 20v) 250 na ultra fast npt - igbt ? the ultra fast npt - igbt ? is a new generation of high voltage power igbts. using non-punch-through technology, the ultra fast npt-igbt ? offers superior ruggedness and ultrafast switching speed. features low saturation voltage low tail current rohs compliant short circuit withstand rated high frequency switching ultra low leakage current unless stated otherwise, microsemi discrete igbts contain a single igbt die. this device is recommended for applications such as induction heating (ih), motor control, general purpose inverters and uninterruptible power supplies (ups). combi (igbt and diode) downloaded from: http:///
APT40GR120B2D30 052-6401 rev b 7-2012 thermal and mechanical characteristics dynamic characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance (igbt) .25 c/w junction to case thermal resistance (diode) .80 r ja junction to ambient thermal resistance 40 w t package weight .22 oz 6.2 g 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 pulse test: pulse width < 380 s , duty cycle < 2%. 3 see mil-std-750 method 3471.4 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) 5 e on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the igbt turn on energy loss. a combi device is used for the clamping diode.6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. microsemi reserves the right to change, without notice, the speci? cations and information contained herein. symbol parameter test conditions min typ max unit c ies input capacitance capacitance v ge = 0v, v ce = 25v f = 1mhz 3980 pf c oes output capacitance 320 c res reverse transfer capacitance 80 v gep gate to emitter plateau voltage gate charge v ge = 15v v ce = 600v i c = 40a 7v q g 3 total gate charge 210 nc q ge gate-emitter charge 25 q gc gate- collector charge 90 t d(on) turn-on delay time inductive switching (25c) v cc = 600v v ge = 15v i c = 40a r g = 4.3 4 t j = +25c 22 ns t r current rise time 25 t d(off) turn-off delay time 163 t f current fall time 40 e on2 5 turn-on switching energy 1375 3000 j e off 6 turn-off switching energy 906 1650 t d(on) turn-on delay time inductive switching (125c) v cc = 600v v ge = 15v i c = 40a r g = 4.3 4 t j = +125c 22 ns t r current rise time 25 t d(off) turn-off delay time 185 t f current fall time 47 e on2 5 turn-on switching energy 1916 3500 j e off 6 turn-off switching energy 1186 2500 downloaded from: http:///
052-6401 rev b 7-2012 APT40GR120B2D30 typical performance curves 0 20 40 60 80 100 120 0 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 -25 0 25 50 75 100 125 0 2 4 6 8 10 12 14 16 18 0 100 200 300 0 1 2 3 4 5 6 6 8 10 12 14 16 0 50 100 150 200 250 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 0 4 8 12 16 20 24 28 32 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 250 s pulse test<0.5 % duty cycle t j = 25c. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle i c = 20a i c = 40a i c = 80a i c = 40a i c = 80a 10v 15v i c = 40a t j = 25c v ce = 960v v ce = 600v v ce = 240v t j = 25c t j = -55c v ge = 15v t j = - 55c t j = 150c v ce , collector-to-emitter voltage (v) figure 1, output characteristics (t j = 25c) i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 2, output characteristics (t j = 25c) i c , collector current (a) t j = 125c v ge , gate-to-emitter voltage (v) figure 4, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 5, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) gate charge (nc) figure 8, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 3, on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 7, dc collector current vs case temperature i c , dc collector current (a) 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 -.50 -.25 0 25 50 75 100 125 150 t j , junction temperature figure 6, threshold voltage vs junction temperature v gs(th) , threshold voltage (normalized) 6v 7v i c = 20a 8v 9v 13v downloaded from: http:///
APT40GR120B2D30 052-6401 rev b 7-2012 typical performance curves 1 10 100 20 30 40 50 60 70 80 10 100 1000 10 20 30 40 50 60 70 80 90 100 1000 10000 0 25 50 75 100 125 700 1000 5000 0 10 20 30 40 50 100 1000 10000 10 20 30 40 50 60 70 80 v ce = 600v, v ge =15v, r g = 4.3 t j = 25c or 125c t d(on) i ce , collector-to-emitter current (a) figure 11, turn-on time vs collector current switching time (ns) i ce , collector-to-emitter current (a) figure 12, turn-off time vs collector current switching time (ns) r g , gate resistance ( ) figure 14, energy loss vs gate resistance i ce , collector-to-emitter current (a) figure 13, energy loss vs collector current switching energy loss ( j) t j , junction temperature (c) figure 15, energy losses vs junction temperature switching energy losses ( j) t r t d(off) t f v ce = 600v, v ge =15v, r g = 4.3 t j = 25c t j = 125c v ce = 600v, v ge =15v, r g = 4.3 t j = 25c t j = 125c e on2 e off e on2 e off v ce = 600v, v ge =15v, i c = 40a t j = 125c switching energy loss ( j) e off e on2 v ce = 600v, v ge =15v, r g = 4.3 i c = 40a 1.0e ? 11 1.0e ? 10 1.0e ? 9 1.0e ? 8 0 10 20 30 40 50 c oes c res c ies v ce , collector-to-emitter voltage (volts) figure 9, capacitance vs collector-to-emitter voltage c, capacitance (f) 0.1 1 10 100 300 1 10 100 1000 2000 v ce , collector-to-emitter voltage figure 16, minimum switching safe operating area i c , collector current (a) apt30dq120 i c a d.u.t. v ce v cc figure 10, inductive switching test circuit 100ms 1ms 100 s 10ms downloaded from: http:///
052-6401 rev b 7-2012 APT40GR120B2D30 typical performance curves 0 0.05 0.10 0.15 0.20 0.25 0.30 10 -4 10 -3 10 -2 0.1 1 10 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 17, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc +t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: downloaded from: http:///
APT40GR120B2D30 052-6401 rev b 7-2012 characteristic / test conditions maximum average forward current (t c = 110c, duty cycle = 0.5) rms forward current (square wave, 50% duty)non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f ( av ) i f ( rms ) i fsm symbol v f characteristic / test conditions i f = 30a forward voltage i f = 60a i f = 30a, t j = 125c static electrical characteristics unit amps unit volts min typ max 2.8 3.4 2.1 APT40GR120B2D30 3043 210 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. ultrafast soft recovery anti-parallel diode min typ max - 26 - 320 - 545 - 4 - - 435 - 2100 - 9 - - 180 - 2975 - 28 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 30a, di f /dt = -200a/ s v r = 800v, t c = 25 c i f = 30a, di f /dt = -200a/ s v r = 800v, t c = 125 c i f = 30a, di f /dt = -1000a/ s v r = 800v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c typical performance curves z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 18. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.900.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: d = 0.9 downloaded from: http:///
052-6401 rev b 7-2012 APT40GR120B2D30 typical performance curves t j = 125 c v r = 800v 15a 30a 60a t rr q rr q rr t rr i rrm 600500 400 300 200 100 0 3530 25 20 15 10 50 duty cycle = 0.5 t j = 175 c 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 5045 40 35 30 25 20 15 10 50 1.21.0 0.8 0.6 0.4 0.2 0.0 200180 160 140 120 100 8060 40 20 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 23. dynamic parameters vs. junction temperature figure 24. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 25. junction capacitance vs. reverse voltage 200180 160 140 120 100 8060 40 20 0 50004000 3000 2000 1000 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 19. forward current vs. forward voltage figure 20. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 21. reverse recovery charge vs. current rate of change figure 22. reverse recovery current vs. current rate of change 0 1 2 3 4 5 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 125 c v r = 800v 60a 15a 30a t j = 125 c v r = 800v 60a 30a 15a t j = 175 c t j = -55 c t j = 25 c t j = 125 c downloaded from: http:///
APT40GR120B2D30 052-6401 rev b 7-2012 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016) these dimensions are equal to the to-247 without the mounting hole. 2-plcs. dimensions in millimeters and (inches) t-max ? (b2) package outline 1.016(.040) dynamic characteristics t j = 25c unless otherwise speci? ed 4 3 1 2 5 zer o 0.25 i rr m pearson 2878 current transformer di f /dt adjus t 30h d.u.t. +18v 0v v r t rr / q rr waveform figure 27. diode reverse recovery waveform de? nition figure 26. diode test circuit i f - forward conduction current di f /dt - rate of diode current change through zero crossing. i rrm - maximum reverse recovery current t rr - reverse recovery time measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through i rrm and 0.25, i rrm passes through zero. q rr - area under the curve de ? ned by i rrm and t rr. 5 1 2 3 4 collector (cathode) gate emitter (anode) collector (cathode) downloaded from: http:///
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